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march 2015 docid027383 rev 3 1 / 17 this is information on a product in full production. www.st.com sth6n95k5 - 2 n - channel 950 v, 1 typ., 6 a mdmesh? k5 power mosfet in a h2pak - 2 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot sth6n95k5 - 2 950 v 1.25 ? 6 a 110 w ? industrys lowest r ds(on) x area ? industrys best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description this very high voltage n - channel power mosfet is designed u sing mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance and ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summary order code marking package packaging sth6n95k5 - 2 6n95k5 h2pak - 2 tape and reel d( t ab) g(1) s(2, 3) am15557a.v3
contents sth6n95k5 - 2 2 / 17 docid027383 rev 3 contents 1 electr ical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package mechanical data ................................ ............................. 10 4.1 package mechanical data ................................ ............................... 11 5 packing information ................................ ................................ ...... 14 6 revision history ................................ ................................ ............ 16
sth6n95k5 - 2 electrical ratings docid027383 rev 3 3 / 17 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d drain current at t c = 25 c 6 a i d drain current at t c = 100 c 3.8 a i dm (1) drain curr ent (pulsed) 24 a p tot total dissipation at t c = 25 c 110 w i ar (2) max current during repetitive or single pulse avalanche 3 a e as (3) single pulse avalanche energy 90 mj dv/dt (4) peak diode recovery voltage slope 4.5 v/ns dv/dt (5) mosfet dv/dt ruggedness 50 v/ns t j operating junction temperature - 55 to 150 c t stg storage temperature notes: (1) pulse width limit ed by safe operating area. (2) pulse width limited by t jmax . (3) starting t j = 25 c, i d = i as , v dd = 50 v. (4) i sd 6 a, di/dt 100 a/s, v ds(peak) v (br)dss . (5) v ds 760 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 1.14 c/w r thj - pcb (1) thermal resistance junction - pcb max 30 notes: (1) when mounted on 1 inch2 fr - 4 board, 2 oz cu.
electrical characteristics sth6n95k5 - 2 4 / 17 docid027383 rev 3 2 electrical characteristics t c = 25 c unless otherwise specified table 4: on/off states symbol p arameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 950 v i dss zero gate voltage drain current v gs = 0 v, v ds = 950 v 1 a v gs = 0 v, v ds = 950 v, t c = 125 c 50 a i gss gate body leakage cu rrent v ds = 0 v, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v cs = 10 v, i d = 3 a 1 1.25 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss i nput capacitance v gs = 0 v, v ds = 100 v, f = 1 mhz - 450 - pf c oss output capacitance - 30 - c oss output capacitance - 1.6 - c o(tr) (1) equivalent capacitance, time - related v gs = 0 v, v ds = 0 to 760 v - 45 - pf c o(er) (2) equivalent capacitance, energy - related - 19 - r g intrinsic gate resistance f = 1 mhz, i d =0 a - 7 - q g total gate charge v dd = 760 v, i d = 6 a, v gs = 10 v (see figure 16: "gate charge test circuit" ) - 13 - nc q gs gate - source charge - 3 - q gd gate - drain charge - 7 - notes: (1) time - related is defined as a const ant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . (2) energy - related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss . table 6 : switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 475 v, i d = 3 a, r g = 4.7 , v gs = 10 v - 12 - ns t r rise time - 12 - ns t d(off) turn - off - delay time - 33 - ns t f fall time - 21 - ns
sth6n95k5 - 2 electrical characteristics docid027383 rev 3 5 / 17 table 7: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 6 a i sdm (1) source - drain current (pulsed) - 24 a v sd (2) forward on voltage i sd = 6 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 6 a, di/dt = 100 a/s v dd = 60 v - 372 ns q rr reverse recovery cha rge - 4 c i rrm reverse recovery current - 22 a t rr reverse recovery time i sd = 6 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c - 522 ns q rr reverse recovery charge - 5 c i rrm reverse recovery current - 20 a notes: (1) pulse width limited by safe operating area (2) pulsed: pulse duration = 300 s, duty cycle 1.5% table 8: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1ma, i d =0 30 - - v the built - in back - to - back z ener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost - effective intervention to protect the device's integrity. these integrated zener diodes th us avoid the usage of external components.
electrical characteristics sth6n95k5 - 2 6 / 17 docid027383 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance v gs 6 4 2 0 (v) 8 10 12 300 200 100 0 400 500 v ds (v) 600 700 qg(nc) v dd =760v i d =6 a v ds 14 12 10 8 6 4 2 0 am07 1 10v1 r ds(on) 0.93 0.91 0.89 0.87 (ohm) 0.95 0.97 0.99 1.01 1.03 i d (a) v gs =10v 3.0 2.5 2.0 1.5 1.0 0.5 am07 11 1v1 6 4 2 0 8 10 5v 6v 7v vgs=10v 12 i d (a) 0 5 10 15 20 25 v ds (v) am07108v1 i d 6 4 2 0 (a) 8 v ds =15v v gs (v) 8 6 4 2 0 am07109v1 cg20930 t p z th = k r thj-c = t p / ? 10 -2 10 -1 k ? = 0.5 = 0.2 = 0.1 = 0.01 = 0.02 = 0.05 single pulse z th = k r thj-c = t p / ? t p ? t p (s) 10 -1 10 -2 10 -3 10 -4 10 -5 v ds (v) i d (a) 100 10 1 0.1 0 . 01 0 . 1 1 1 0 100s 1ms 10ms operation in this area is limited by max r ds(on) t j =150c t c =25c single pulse gipg220120151710als
sth6n95k5 - 2 electrical characteristics docid027383 rev 3 7 / 17 figure 8 : capacitance variations figure 9 : output capacitance stored energy figure 10 : normalized gate threshold voltage vs temperature figure 11 : normalized on - resistance vs temperature figure 12 : source - drain diode forward characteristics figure 13 : normalized v(br)dss vs temperature 0.55 0.65 0.75 0.85 0.95 i sd (a) 6.0 5.0 4.0 3.0 2.0 v sd (v) r ds(on) 2.0 1.5 1.0 0.5 (norm) 2.5 0 t j (c) 125 75 25 -25 -75 v gs =10v am07 1 15v1 v gs(th) 0.7 0.6 0.5 0.4 (norm) 0.8 0.9 1.0 1.1 1.2 t j (c) i d =100 a 125 75 25 -25 -75 am07 1 14v1 4 0 8 12 16 20 v ds (v) e oss (j) 800 600 400 200 0 am07 1 13v1 c 1000 100 10 1 (pf) c iss c oss c rss v ds (v) 100 10 1 0.1 am07 1 12v1 0.7 0.8 0.9 1.0 1.1 1.2 t j (c) i d =1 m a v (br)dss (norm) 125 75 25 -25 -75 am07 1 16v1
electrical characteristics sth6n95k5 - 2 8 / 17 docid027383 rev 3 fi gure 14 : maximum avalanche energy vs starting tj 0 20 40 60 80 100 i d =3 a v dd =50 v t j (c) e as (mj) 140 120 100 80 60 40 20 0 am07 1 17v1
sth6n95k5 - 2 test circuits docid027383 rev 3 9 / 17 3 test circuits figure 15 : switching times test circuit for r esistive load figure 16 : gate charge test circuit figure 17 : test circuit for inductive load switching and diode recovery times figure 18 : unclamped inductive load test cir cuit figure 19 : unclamped inductive waveform figure 20 : switching time waveform am01470v1 a d d.u. t . s b g 25 a a b b r g g f as t diode d s l=100 h f 3.3 1000 f v dd d.u. t . am01469v 1 v dd 47 k 1 k 47 k 2.7 k 1 k 12 v v i v gs 2200 f p w i g = const 100 100 nf d.u.t. v g am01473v 1 0 v gs 90% v ds t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off v (br)dss v dd v dd v d i dm i d am01472v 1
package mechanical data sth6n95k5 - 2 10 / 17 docid027383 rev 3 4 package mechanical data in order to mee t environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
sth6n95k5 - 2 package mecha nical data docid027383 rev 3 11 / 17 4.1 package mechanical data figure 21 : h2pak - 2 outline 8159712_d
package mechanical data sth6n95k5 - 2 12 / 17 docid027383 rev 3 table 9: h2pak - 2 mechanical data dim. mm min. typ. max. a 4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 4.98 5.18 e 0.50 0.90 f 0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m 2.6 2.9 r 0.20 0.60 v 0 8
sth6n95k5 - 2 package mechanical data docid027383 rev 3 13 / 17 figure 22 : h2pak - 2 recomm ended footprint 8159712_d
packing information sth6n95k5 - 2 14 / 17 docid027383 rev 3 5 packing information figure 23 : tape outline
sth6n95k5 - 2 packing information docid027383 rev 3 15 / 17 figure 24 : reel outline table 10: tape and reel mechani cal data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3 a d b f u ll r ad i u s t ape s l o t i n c o r e f o r t ape s t a rt g m ea s u r e d a t hu b c n ree l d i m ens io n s 40 mm m i n . acc e ss ho l e at s lot lo c a t ion t
revision history sth6n95k5 - 2 16 / 17 docid027383 rev 3 6 revision history table 11: document revision history date revision changes 23 - jan - 2015 1 first rele ase. 04 - feb - 2015 2 updated section 2: "electrical characteristics" 12 - mar - 2015 3 document status changed from preliminary to producion data.
sth6n95k5 - 2 docid027383 rev 3 17 / 17 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice . purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products wi th provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information i n this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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